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Disambiguation of "Mitard, Jérôme"

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Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET.

, , , , , , , and . Microelectronics Reliability, (2018)

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Jerome Pfeiffer University of Stuttgart

Jerome Hildebrandt University of Stuttgart

 

Other publications of authors with the same name

CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks., , , , , , , , , and 2 other author(s). ESSDERC, page 242-245. IEEE, (2012)Scaling CMOS beyond Si FinFET: an analog/RF perspective., , , , , , , , , and 4 other author(s). ESSDERC, page 158-161. IEEE, (2018)Detecting Transistor Defects in Medical Systems Using a Multi Model Ensemble of Convolutional Neural Networks., , , and . IEEE BigData, page 4731-4737. IEEE, (2021)Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs., , , , , , , , , and 1 other author(s). ESSDERC, page 330-333. IEEE, (2012)Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling., , , , , , , , and . IEEE Trans. VLSI Syst., 20 (8): 1487-1495 (2012)Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling., , , , , , , , and . ISCAS, page 2249-2252. IEEE, (2011)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET., , , , , , , and . Microelectronics Reliability, (2018)Towards high performance sub-10nm finW bulk FinFET technology., , , , , , , , , and 10 other author(s). ESSDERC, page 131-134. IEEE, (2016)