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Wide Bandwidth Current Sensor Combining a Coreless Current Transformer and TMR Sensors

N. Troester, J. Ruthardt, M. Nitzsche, und J. Roth-Stielow. PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Seite 1-7. (Juni 2018)

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Wide Bandwidth Current Sensor Combining a Coreless Current Transformer and TMR SensorsN. Troester, J. Ruthardt, M. Nitzsche, und J. Roth-Stielow. PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Seite 1-7. (Juni 2018)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical ParameterK. Sharma, K. Baron, J. Ruthardt, J. Hueckelheim, D. Koch, F. Muenzenmayer, und I. Kallfass. CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, Seite 1-6. (März 2020)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical ParameterK. Sharma, K. Muñoz Barón, J. Ruthardt, J. Hückelheim, D. Koch, F. Münzenmayer, und I. Kallfass. in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)Characterisation of the Junction Temperature of Gallium Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical ParameterK. Sharma, K. Muñoz Barón, J. Ruthardt, J. Hückelheim, D. Koch, F. Münzenmayer, und I. Kallfass. in 10th International Conference on Power Electronics, Machines and Drives, Nottingham, UK, (2020)Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical ParameterK. Sharma, K. Muñoz Barón, J. Ruthardt, J. Hueckelheim, D. Koch, F. Muenzenmayer, und I. Kallfass. in. Proc. ECCE Asia, (2021)A Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical ParameterK. Sharma, D. Dayanand, K. Munoz-Baron, J. Ruthardt, F. Muenzenmayer, J. Hueckelheim, und I. Kallfass. in Proc. Applied Power Electronics Conf. (APEC), New Orleans, (März 2020)Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical ParameterK. Sharma, D. Dayanand, K. Munoz-Baron, J. Ruthardt, F. Muenzenmayer, J. Hueckelheim, und I. Kallfass. in Proc. Applied Power Electronics Conf. (APEC), New Orleans, (März 2020)Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEPK. Sharma, K. Munoz-Baron, J. Ruthardt, und I. Kallfass. in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), (2021)