Autor der Publikation

Kopieren Löschen Diese Publikation zur Ablage hinzufügen
Community-Eintrag
Versionsverlauf dieses Eintrags
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices.

M. Litzenberger, C. Furböck, S. Bychikhin, D. Pogany, und E. Gornik. IEEE Trans. Instrumentation and Measurement, 54 (6): 2438-2445 (2005)

Bitte wählen Sie eine Person um die Publikation zuzuordnen

Um zwischen Personen mit demselben Namen zu unterscheiden, wird der akademische Grad und der Titel einer wichtigen Publikation angezeigt. Zudem lassen sich über den Button neben dem Namen einige der Person bereits zugeordnete Publikationen anzeigen.

Hon. -Prof. Dr. -Ing. Erich Schelkle University of Stuttgart

Prof. Dr. Erich Zahn University of Stuttgart

Prof. Dr. Erich Kasper University of Stuttgart

Hon. -Prof. Dr. -Ing. Erich Reinhardt University of Stuttgart

Prof. Dr. -Ing. Erich Hahne University of Stuttgart

Weitere Publikationen von Autoren mit dem selben Namen

Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology.M. Heer, K. Domanski, K. Esmark, U. Glaser, D. Pogany, E. Gornik, und W. Stadler. Microelectronics Reliability, 49 (12): 1455-1464 (2009)Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices.M. Litzenberger, C. Furböck, S. Bychikhin, D. Pogany, und E. Gornik. IEEE Trans. Instrumentation and Measurement, 54 (6): 2438-2445 (2005)Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method.M. Blaho, D. Pogany, E. Gornik, M. Denison, G. Groos, und M. Stecher. Microelectronics Reliability, 43 (4): 545-548 (2003)Multiple-time-instant 2D thermal mapping during a single ESD event.V. Dubec, S. Bychikhin, M. Blaho, M. Heer, D. Pogany, M. Denison, N. Jensen, M. Stecher, G. Groos, und E. Gornik. Microelectronics Reliability, 44 (9-11): 1793-1798 (2004)Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique.D. Pogany, J. Kuzmík, J. Darmo, M. Litzenberger, S. Bychikhin, K. Unterrainer, Z. Mozolova, S. Hascik, T. Lalinsky, und E. Gornik. Microelectronics Reliability, 42 (9-11): 1673-1677 (2002)Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures.S. Bychikhin, M. Litzenberger, R. Pichler, D. Pogany, E. Gornik, G. Groos, und M. Stecher. Microelectronics Reliability, 41 (9-10): 1501-1506 (2001)Backside interferometric methods for localization of ESD-induced leakage current and metal shorts.V. Dubec, S. Bychikhin, D. Pogany, E. Gornik, T. Brodbeck, und W. Stadler. Microelectronics Reliability, 47 (9-11): 1539-1544 (2007)Automated setup for thermal imaging and electrical degradation study of power DMOS devices.M. Heer, V. Dubec, M. Blaho, S. Bychikhin, D. Pogany, E. Gornik, M. Denison, M. Stecher, und G. Groos. Microelectronics Reliability, 45 (9-11): 1688-1693 (2005)Application of transient interferometric mapping method for ESD and latch-up analysis.D. Pogany, S. Bychikhin, M. Heer, W. Mamanee, und E. Gornik. Microelectronics Reliability, 51 (9-11): 1592-1596 (2011)Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress.S. Bychikhin, V. Dubec, D. Pogany, E. Gornik, M. Graf, V. Dudek, und W. Soppa. Microelectronics Reliability, 44 (9-11): 1687-1692 (2004)