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Poster:Epitaxial approaches for III-V photonics on silicon, , , , , , , , and . (2011)Ge-on-Si Avalanche Photodiodes for LIDAR Applications, , , , and . 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), page 8-12. (September 2020)Temperature stability of MBE-grown SixGe1-x-ySny structures with high Sn content, , , , , and . (2018)Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range, , , , , , and . Thin Solid Films, (December 2012)Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%, , , , , , , and . Surface and Interface Analysis, (2017)Ge-on-Si photodiode with black silicon boosted responsivity, , , , , , , and . Appl. Phys. Lett., 107 (5): 051103-- (August 2015)Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver, , , , , , , and . 2017 IEEE International Electron Devices Meeting (IEDM), page 24.4.1-24.4.4. (December 2017)Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers, , , , , , , , , and . 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), page 17-21. (September 2020)Talk:Approaches for III/V Photonics on Si, , , , , , , , , and . (2010)(Invited) GeSn Photodetection and Electroluminescence Devices on Si, , and . ECS Transactions, 50 (9): 583--590 (March 2013)