%0 Conference Paper %1 8268453 %A Koerner, R. %A Fischer, I. A. %A Soref, R. %A Schwarz, D. %A Clausen, C. J. %A Hänel, L. %A Oehme, M. %A Schulze, J. %B 2017 IEEE International Electron Devices Meeting (IEDM) %D 2017 %K iht j.schulze.iht journal professional_meetings %P 24.4.1-24.4.4 %R 10.1109/IEDM.2017.8268453 %T Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver %X We report on the fabrication of a Ge on Si photonic (SiP) device enabling light emission under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge tunnel diodes (TDs) - The Zener-Emitter (ZE) 1 and the Esaki-Collector (EC). The devices enable for the first time monolithic, highly efficient electrical-to-optical (E/O; Cs = 114 mV/dec) and optical-to-electrical (O/E; Cs = 31 mV/dec) signal conversion since the TDs control carrier injection and extraction. The light source (ZE) is realized as an ultra-fast LED (f > 1 GHz) and as a cavity enhanced Laser source with P_out = 1.6 mW output power. The carrier-collection efficiency in the detector (EC) is enhanced by the Esaki tunnel junction, while the rapid turn-off is induced by the negative-differential resistance (NDR; f > 22 GHz), enabling sub-thermal voltage switching.

@inproceedings{8268453, abstract = {We report on the fabrication of a Ge on Si photonic (SiP) device enabling light emission under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge tunnel diodes (TDs) - The Zener-Emitter (ZE) [1] and the Esaki-Collector (EC). The devices enable for the first time monolithic, highly efficient electrical-to-optical (E/O; Cs = 114 mV/dec) and optical-to-electrical (O/E; Cs = 31 mV/dec) signal conversion since the TDs control carrier injection and extraction. The light source (ZE) is realized as an ultra-fast LED (f > 1 GHz) and as a cavity enhanced Laser source with P_out = 1.6 mW output power. The carrier-collection efficiency in the detector (EC) is enhanced by the Esaki tunnel junction, while the rapid turn-off is induced by the negative-differential resistance (NDR; f > 22 GHz), enabling sub-thermal voltage switching.}, added-at = {2021-11-11T08:33:50.000+0100}, author = {Koerner, R. and Fischer, I. A. and Soref, R. and Schwarz, D. and Clausen, C. J. and Hänel, L. and Oehme, M. and Schulze, J.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/228ab922b1018042182f83044599f167d/ihtpublikation}, booktitle = {2017 IEEE International Electron Devices Meeting (IEDM)}, description = {Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver | IEEE Conference Publication | IEEE Xplore}, doi = {10.1109/IEDM.2017.8268453}, interhash = {d3f12a9116178c57a8756c343228a825}, intrahash = {28ab922b1018042182f83044599f167d}, issn = {2156-017X}, keywords = {iht j.schulze.iht journal professional_meetings}, month = dec, pages = {24.4.1-24.4.4}, timestamp = {2021-11-11T12:24:46.000+0100}, title = {Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver}, year = 2017 }