We report on the fabrication of a Ge on Si photonic (SiP) device enabling light emission under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge tunnel diodes (TDs) - The Zener-Emitter (ZE) 1 and the Esaki-Collector (EC). The devices enable for the first time monolithic, highly efficient electrical-to-optical (E/O; Cs = 114 mV/dec) and optical-to-electrical (O/E; Cs = 31 mV/dec) signal conversion since the TDs control carrier injection and extraction. The light source (ZE) is realized as an ultra-fast LED (f > 1 GHz) and as a cavity enhanced Laser source with P<sub>out</sub> = 1.6 mW output power. The carrier-collection efficiency in the detector (EC) is enhanced by the Esaki tunnel junction, while the rapid turn-off is induced by the negative-differential resistance (NDR; f > 22 GHz), enabling sub-thermal voltage switching.
Description
Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver | IEEE Conference Publication | IEEE Xplore
%0 Conference Paper
%1 8268453
%A Koerner, R.
%A Fischer, I. A.
%A Soref, R.
%A Schwarz, D.
%A Clausen, C. J.
%A Hänel, L.
%A Oehme, M.
%A Schulze, J.
%B 2017 IEEE International Electron Devices Meeting (IEDM)
%D 2017
%K iht j.schulze.iht journal professional_meetings
%P 24.4.1-24.4.4
%R 10.1109/IEDM.2017.8268453
%T Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver
%X We report on the fabrication of a Ge on Si photonic (SiP) device enabling light emission under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge tunnel diodes (TDs) - The Zener-Emitter (ZE) 1 and the Esaki-Collector (EC). The devices enable for the first time monolithic, highly efficient electrical-to-optical (E/O; Cs = 114 mV/dec) and optical-to-electrical (O/E; Cs = 31 mV/dec) signal conversion since the TDs control carrier injection and extraction. The light source (ZE) is realized as an ultra-fast LED (f > 1 GHz) and as a cavity enhanced Laser source with P<sub>out</sub> = 1.6 mW output power. The carrier-collection efficiency in the detector (EC) is enhanced by the Esaki tunnel junction, while the rapid turn-off is induced by the negative-differential resistance (NDR; f > 22 GHz), enabling sub-thermal voltage switching.
@inproceedings{8268453,
abstract = {We report on the fabrication of a Ge on Si photonic (SiP) device enabling light emission under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge tunnel diodes (TDs) - The Zener-Emitter (ZE) [1] and the Esaki-Collector (EC). The devices enable for the first time monolithic, highly efficient electrical-to-optical (E/O; Cs = 114 mV/dec) and optical-to-electrical (O/E; Cs = 31 mV/dec) signal conversion since the TDs control carrier injection and extraction. The light source (ZE) is realized as an ultra-fast LED (f > 1 GHz) and as a cavity enhanced Laser source with P<sub>out</sub> = 1.6 mW output power. The carrier-collection efficiency in the detector (EC) is enhanced by the Esaki tunnel junction, while the rapid turn-off is induced by the negative-differential resistance (NDR; f > 22 GHz), enabling sub-thermal voltage switching.},
added-at = {2021-11-11T08:33:50.000+0100},
author = {Koerner, R. and Fischer, I. A. and Soref, R. and Schwarz, D. and Clausen, C. J. and Hänel, L. and Oehme, M. and Schulze, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/228ab922b1018042182f83044599f167d/ihtpublikation},
booktitle = {2017 IEEE International Electron Devices Meeting (IEDM)},
description = {Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver | IEEE Conference Publication | IEEE Xplore},
doi = {10.1109/IEDM.2017.8268453},
interhash = {d3f12a9116178c57a8756c343228a825},
intrahash = {28ab922b1018042182f83044599f167d},
issn = {2156-017X},
keywords = {iht j.schulze.iht journal professional_meetings},
month = dec,
pages = {24.4.1-24.4.4},
timestamp = {2021-11-11T12:24:46.000+0100},
title = {Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver},
year = 2017
}