%0 Conference Paper %1 9245273 %A Dettling, M. M. %A Weiβhaupt, D. %A Funk, H. S. %A Kern, M. %A Berkmann, F. %A Clausen, C. %A Oehme, M. %A Schwarz, D. %A v. Slageren, J. %A Schulze, J. %B 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO) %D 2020 %K iht j.schulze.iht journal professional_meetings %P 17-21 %R 10.23919/MIPRO48935.2020.9245273 %T Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers %U https://ieeexplore.ieee.org/document/9245273/ %X This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge1-xSnx-epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge1-xSnx-alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100) wafer using molecular beam epitaxy. The crystal structure and quality of the Ge1-xSnx-epilayers were analyzed by high-resolution X-ray diffraction. In order to extract the carrier mobilities in Ge1-xSnx, low temperature hall measurements were carried out, using a Van-der-Pauw-geometry. It is shown that with increasing Sn-concentration we find a decrease in carrier mobility, which corresponds to an increasing sheetresistance.

@inproceedings{9245273, abstract = {This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge1-xSnx-epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge1-xSnx-alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100) wafer using molecular beam epitaxy. The crystal structure and quality of the Ge1-xSnx-epilayers were analyzed by high-resolution X-ray diffraction. In order to extract the carrier mobilities in Ge1-xSnx, low temperature hall measurements were carried out, using a Van-der-Pauw-geometry. It is shown that with increasing Sn-concentration we find a decrease in carrier mobility, which corresponds to an increasing sheetresistance.}, added-at = {2020-12-11T10:50:14.000+0100}, author = {{Dettling}, M. M. and {Weiβhaupt}, D. and {Funk}, H. S. and {Kern}, M. and {Berkmann}, F. and {Clausen}, C. and {Oehme}, M. and {Schwarz}, D. and v. {Slageren}, J. and {Schulze}, J.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/20d662a8eb00103cd73202976cdf8fd2f/ihtpublikation}, booktitle = {2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)}, doi = {10.23919/MIPRO48935.2020.9245273}, interhash = {7f884bb36c0f53d163a8ed5f3e53b960}, intrahash = {0d662a8eb00103cd73202976cdf8fd2f}, issn = {2623-8764}, keywords = {iht j.schulze.iht journal professional_meetings}, month = {9}, pages = {17-21}, timestamp = {2021-11-12T15:57:33.000+0100}, title = {Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers}, url = {https://ieeexplore.ieee.org/document/9245273/}, year = 2020 }