This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge1-xSnx-epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge1-xSnx-alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100) wafer using molecular beam epitaxy. The crystal structure and quality of the Ge1-xSnx-epilayers were analyzed by high-resolution X-ray diffraction. In order to extract the carrier mobilities in Ge1-xSnx, low temperature hall measurements were carried out, using a Van-der-Pauw-geometry. It is shown that with increasing Sn-concentration we find a decrease in carrier mobility, which corresponds to an increasing sheetresistance.
%0 Conference Paper
%1 9245273
%A Dettling, M. M.
%A Weiβhaupt, D.
%A Funk, H. S.
%A Kern, M.
%A Berkmann, F.
%A Clausen, C.
%A Oehme, M.
%A Schwarz, D.
%A v. Slageren, J.
%A Schulze, J.
%B 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)
%D 2020
%K iht j.schulze.iht journal professional_meetings
%P 17-21
%R 10.23919/MIPRO48935.2020.9245273
%T Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers
%U https://ieeexplore.ieee.org/document/9245273/
%X This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge1-xSnx-epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge1-xSnx-alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100) wafer using molecular beam epitaxy. The crystal structure and quality of the Ge1-xSnx-epilayers were analyzed by high-resolution X-ray diffraction. In order to extract the carrier mobilities in Ge1-xSnx, low temperature hall measurements were carried out, using a Van-der-Pauw-geometry. It is shown that with increasing Sn-concentration we find a decrease in carrier mobility, which corresponds to an increasing sheetresistance.
@inproceedings{9245273,
abstract = {This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge1-xSnx-epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge1-xSnx-alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100) wafer using molecular beam epitaxy. The crystal structure and quality of the Ge1-xSnx-epilayers were analyzed by high-resolution X-ray diffraction. In order to extract the carrier mobilities in Ge1-xSnx, low temperature hall measurements were carried out, using a Van-der-Pauw-geometry. It is shown that with increasing Sn-concentration we find a decrease in carrier mobility, which corresponds to an increasing sheetresistance.},
added-at = {2020-12-11T10:50:14.000+0100},
author = {{Dettling}, M. M. and {Weiβhaupt}, D. and {Funk}, H. S. and {Kern}, M. and {Berkmann}, F. and {Clausen}, C. and {Oehme}, M. and {Schwarz}, D. and v. {Slageren}, J. and {Schulze}, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/20d662a8eb00103cd73202976cdf8fd2f/ihtpublikation},
booktitle = {2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)},
doi = {10.23919/MIPRO48935.2020.9245273},
interhash = {7f884bb36c0f53d163a8ed5f3e53b960},
intrahash = {0d662a8eb00103cd73202976cdf8fd2f},
issn = {2623-8764},
keywords = {iht j.schulze.iht journal professional_meetings},
month = {9},
pages = {17-21},
timestamp = {2021-11-12T15:57:33.000+0100},
title = {Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers},
url = {https://ieeexplore.ieee.org/document/9245273/},
year = 2020
}