%0 Journal Article %1 steglich2015geonsi %A Steglich, M %A Oehme, M %A Käsebier, T %A Zilk, M %A Kostecki, K %A Kley, E.-B %A Schulze, J %A Tünnermann, A %B Applied Physics Letters %D 2015 %I American Institute of Physics %J Appl. Phys. Lett. %K iht j.schulze.iht journal %N 5 %P 051103-- %R 10.1063/1.4927836 %T Ge-on-Si photodiode with black silicon boosted responsivity %U https://doi.org/10.1063/1.4927836 %V 107 %X Normal-incidence Ge-on-Si photodiodes with 300 nm thick intrinsic Ge absorber layer and black silicon light-trapping are fabricated and analyzed with regard to their responsivity. Compared to a standard Ge-on-Si photodiode without black silicon, the black silicon device exhibits a 3-times increased responsivity of 0.34 A/W at 1550 nm. By that, the problematic bandwidth-responsivity trade-off in ultrafast Ge-on-Si detectors can be widely overcome. The black silicon light-trapping structure can be applied to the device rear during back-end processing.

@article{steglich2015geonsi, abstract = {Normal-incidence Ge-on-Si photodiodes with 300 nm thick intrinsic Ge absorber layer and black silicon light-trapping are fabricated and analyzed with regard to their responsivity. Compared to a standard Ge-on-Si photodiode without black silicon, the black silicon device exhibits a 3-times increased responsivity of 0.34 A/W at 1550 nm. By that, the problematic bandwidth-responsivity trade-off in ultrafast Ge-on-Si detectors can be widely overcome. The black silicon light-trapping structure can be applied to the device rear during back-end processing.}, added-at = {2018-11-16T14:01:53.000+0100}, author = {Steglich, M and Oehme, M and Käsebier, T and Zilk, M and Kostecki, K and Kley, E.-B and Schulze, J and Tünnermann, A}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2155805174c0d1fcd121856326248fe28/ihtpublikation}, booktitle = {Applied Physics Letters}, comment = {doi: 10.1063/1.4927836}, doi = {10.1063/1.4927836}, interhash = {f7ba3d3bf9fa59c145a7a42a566eda81}, intrahash = {155805174c0d1fcd121856326248fe28}, issn = {00036951}, journal = {Appl. Phys. Lett.}, keywords = {iht j.schulze.iht journal}, month = aug, number = 5, pages = {051103--}, publisher = {American Institute of Physics}, timestamp = {2018-11-16T13:01:53.000+0100}, title = {Ge-on-Si photodiode with black silicon boosted responsivity}, url = {https://doi.org/10.1063/1.4927836}, volume = 107, year = 2015 }