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Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology., , , , and . Microelectronics Reliability, 45 (5-6): 937-940 (2005)Talk:Approaches for III/V Photonics on Si, , , , , , , , , and . (2010)(Invited) UV Excimer Laser Assisted Heteroepitaxy of (Si)GeSn on Si(100), , , , , , and . ECS Transactions, 64 (6): 115--125 (August 2014)(Invited) GeSn Photodetection and Electroluminescence Devices on Si, , and . ECS Transactions, 50 (9): 583--590 (March 2013)(Invited) Mn5Ge3C0.8 Contacts for Spin Injection Into Ge, , , , and . ECS Transactions, 58 (9): 29--36 (August 2013)Charge Trapping Analysis of Metal/Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si, Gate Stack for Emerging Embedded Memories, , , , , and . IEEE Transactions on Device and Materials Reliability, 17 (1): 80-89 (March 2017)Mn5Ge3 thin film contacts for semiconductor spintronics, , , , , , and . (2018)Alloy Stability of Ge1−xSnx with Sn Concentrations up to 15% Utilizing Low-Temperature Molecular Beam Epitaxy, , and . (2019)Titanium and Nickel as alternative materials for mid Infrared Plasmonic, , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 36-39. (September 2021)Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx, , , , , , and . Opt. Mater. Express, 13 (3): 752--763 (2023)