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The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs.

, , , and . Microelectronics Journal, 37 (9): 952-957 (2006)

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Study of the linear kink effect in PD SOI nMOSFETs., , , and . Microelectronics Journal, 38 (1): 114-119 (2007)High-temperature performance of state-of-the-art triple-gate transistors., , , , , , and . Microelectronics Reliability, 47 (12): 2065-2069 (2007)Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs., , , , , , and . Microelectronics Reliability, 46 (9-11): 1657-1663 (2006)Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs., , , , , , , , and . Microelectronics Reliability, 45 (9-11): 1376-1381 (2005)Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS., , , and . Microelectronics Journal, 37 (8): 681-685 (2006)Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation., , , , , , , and . Microelectronics Reliability, 46 (9-11): 1731-1735 (2006)Editor's note., , , , and . SCIENCE CHINA Information Sciences, 59 (6): 060401:1 (2016)The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs., , , and . Microelectronics Journal, 37 (9): 952-957 (2006)Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs., , , , , , , , , and 1 other author(s). ESSDERC, page 330-333. IEEE, (2012)Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle., , , , , , , , and . Microelectronics Reliability, 41 (1): 79-85 (2001)