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Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.

, , , , , , , and . Microelectronics Reliability, 46 (9-11): 1731-1735 (2006)

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Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation., , , , , , , and . Microelectronics Reliability, 44 (9-11): 1721-1726 (2004)Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs., , , , , , and . Microelectronics Reliability, 46 (9-11): 1657-1663 (2006)Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides., , , , , , , and . Microelectronics Reliability, 42 (9-11): 1501-1504 (2002)Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation., , , , , , , and . Microelectronics Reliability, 46 (9-11): 1731-1735 (2006)2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness., , , , , , , and . Microelectronics Reliability, 53 (9-11): 1333-1337 (2013)Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs., , , , , , , , and . Microelectronics Reliability, 45 (9-11): 1376-1381 (2005)