Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Journal Article
%1 journals/mr/RafiSHMCOC06
%A Rafí, Joan Marc
%A Simoen, Eddy
%A Hayama, Kiyoteru
%A Mercha, Abdelkarim
%A Campabadal, Francesca
%A Ohyama, Hidenori
%A Claeys, Cor
%D 2006
%J Microelectronics Reliability
%K dblp
%N 9-11
%P 1657-1663
%T Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
%U http://dblp.uni-trier.de/db/journals/mr/mr46.html#RafiSHMCOC06
%V 46
@article{journals/mr/RafiSHMCOC06,
added-at = {2019-06-02T00:00:00.000+0200},
author = {Rafí, Joan Marc and Simoen, Eddy and Hayama, Kiyoteru and Mercha, Abdelkarim and Campabadal, Francesca and Ohyama, Hidenori and Claeys, Cor},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2ec8d8896c82b3f99e016c8216b67195d/dblp},
ee = {https://www.wikidata.org/entity/Q61825828},
interhash = {6b5716d2aa031bf81c9a7e1f89943f3d},
intrahash = {ec8d8896c82b3f99e016c8216b67195d},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = {9-11},
pages = {1657-1663},
timestamp = {2019-09-27T10:58:24.000+0200},
title = {Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr46.html#RafiSHMCOC06},
volume = 46,
year = 2006
}