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Disambiguierung von "Fischetti, Massimo V."

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Numerical modeling of advanced semiconductor devices.

, , , , , , , , , und . IBM Journal of Research and Development, 36 (2): 208-232 (1992)

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V. Vaikuntanathan

V. Zaverkin

Univ. -Prof. Dr. -Ing. Alexander Verl University of Stuttgart

Software-Defined Control Cabinet : Reprogramming Instead of Replacing, , , und . Production at the Leading Edge of Technology : Proceedings of the 13th Congress of the German Academic Association for Production Technology (WGP), Seite 438-447. Cham, Springer, (2024)
Software-Defined Control Cabinet : Reprogramming Instead of Replacing, , , und . Production at the Leading Edge of Technology : Proceedings of the 13th Congress of the German Academic Association for Production Technology (WGP), Seite 438-447. Cham, Springer, (2024)Complex Physics with Graph Networks for Industrial Material Flow Simulation, , , , , und . 16th CIRP Conference on Intelligent Computation in Manufacturing Engineering, 118, Seite 50-55. Elsevier, (2023)

Univ. -Prof. Dr. Joris van Slageren University of Stuttgart

Electrocatalytic proton reduction: Metal based fused diporphyrins with proton relays for efficient catalysis, , , , , , , , und . Dataset, (2024)Related to: Chandra, S., Singha Hazari, A., Song, Q., Hunger, D., Neuman, N. I., van Slageren, J., Klemm, E. & Sarkar, B. (2023). Remarkable Enhancement of Catalytic Activity of Cu-Complexes in the Electrochemical Hydrogen Evolution Reaction by Using Triply Fused Porphyrin. ChemSusChem 16, e202201146. doi: 10.1002/cssc.202201146.

Michael P. Voigt Universität Stuttgart

 

Weitere Publikationen von Autoren mit dem selben Namen

Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies., und . Microelectronics Reliability, 41 (9-10): 1465-1470 (2001)Silicon CMOS devices beyond scaling., , , , , , , , , und . IBM Journal of Research and Development, 50 (4-5): 339-362 (2006)Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation.. VLSI Design, 1998 (1): 173-178 (1998)Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials., , und . Comput. Phys. Commun., (2019)Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs., , , , und . Microelectronics Reliability, 52 (12): 2907-2913 (2012)Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices., , und . Numerical Methods and Applications, Volume 4310 von Lecture Notes in Computer Science, Seite 189-196. Springer, (2006)Numerical modeling of advanced semiconductor devices., , , , , , , , , und . IBM Journal of Research and Development, 36 (2): 208-232 (1992)Monte Carlo and hydrodynamic simulation of a one dimensional n+ - n - n+ silicon diode., , und . VLSI Design, 1998 (1): 247-250 (1998)Hole transport in p-channel Si MOSFETs., , und . Microelectronics Journal, 36 (3-6): 323-326 (2005)