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Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies., and . Microelectronics Reliability, 41 (9-10): 1465-1470 (2001)Silicon CMOS devices beyond scaling., , , , , , , , , and . IBM Journal of Research and Development, 50 (4-5): 339-362 (2006)Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation.. VLSI Design, 1998 (1): 173-178 (1998)Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials., , and . Comput. Phys. Commun., (2019)Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs., , , , and . Microelectronics Reliability, 52 (12): 2907-2913 (2012)Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices., , and . Numerical Methods and Applications, volume 4310 of Lecture Notes in Computer Science, page 189-196. Springer, (2006)Numerical modeling of advanced semiconductor devices., , , , , , , , , and . IBM Journal of Research and Development, 36 (2): 208-232 (1992)Hole transport in p-channel Si MOSFETs., , and . Microelectronics Journal, 36 (3-6): 323-326 (2005)Monte Carlo and hydrodynamic simulation of a one dimensional n+ - n - n+ silicon diode., , and . VLSI Design, 1998 (1): 247-250 (1998)