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Disambiguation of "Degraeve, Robin"

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On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers.

, , , and . Microelectronics Reliability, 45 (5-6): 815-818 (2005)

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Robin Göbel University of Stuttgart

Univ. -Prof. Dr. Robin Ghosh University of Stuttgart

Prof. Dr. Robin Hahn University of Stuttgart

Robin Wickersheim University of Stuttgart

Robin Rainer Herkert University of Stuttgart

Dictionary-based online-adaptive structure-preserving model order reduction for parametric Hamiltonian systems, , and . Advances in computational mathematics, 50 (12): 12 (2024)
 

Other publications of authors with the same name

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability., , , and . Microelectronics Reliability, 47 (4-5): 559-566 (2007)A new method for the analysis of high-resolution SILC data., , , , , , , , , and . Microelectronics Reliability, 43 (9-11): 1483-1488 (2003)Distribution and generation of traps in SiO2/Al2O3 gate stacks., , , , , and . Microelectronics Reliability, 47 (4-5): 525-527 (2007)Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study., , , , , and . Microelectronics Reliability, 42 (4-5): 555-564 (2002)Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit., , , , , , and . ESSDERC, page 146-149. IEEE, (2018)High-resolution SILC measurements of thin SiO2 at ultra low voltages., , , , , , , , , and . Microelectronics Reliability, 42 (9-11): 1485-1489 (2002)A multi-bit/cell PUF using analog breakdown positions in CMOS., , , , , , , and . IRPS, page 2-1. IEEE, (2018)Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current., , , , , , and . ESSDERC, page 262-265. IEEE, (2015)A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS., , , , , and . J. Solid-State Circuits, 54 (10): 2765-2776 (2019)Cost-effective cleaning and high-quality thin gate oxides., , , , , , , , , and 8 other author(s). IBM Journal of Research and Development, 43 (3): 339-350 (1999)