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Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses., , , , and . Microelectronics Reliability, 49 (9-11): 1024-1028 (2009)A New Time Efficient Methodology for the Massive Characterization of RTN in CMOS Devices., , , , , , , , and . IRPS, page 1-5. IEEE, (2019)Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology., , , , , , , , , and 2 other author(s). PATMOS, page 82-87. IEEE, (2018)Reliability in Super- and Near-Threshold Computing: A Unified Model of RTN, BTI, and PV., , , , and . IEEE Trans. on Circuits and Systems, 65-I (1): 293-306 (2018)TiDeVa: A Toolbox for the Automated and Robust Analysis of Time-Dependent Variability at Transistor Level., , , , , , , and . SMACD, page 197-200. IEEE, (2019)Experimental Characterization of Time-Dependent Variability in Ring Oscillators., , , , , , and . SMACD, page 229-232. IEEE, (2019)Including a stochastic model of aging in a reliability simulation flow., , , , , , , and . SMACD, page 1-4. IEEE, (2017)New method for the automated massive characterization of Bias Temperature Instability in CMOS transistors., , , , , , , and . DATE, page 150-155. IEEE, (2019)Generation of Lifetime-Aware Pareto-Optimal Fronts Using a Stochastic Reliability Simulator., , , , , , , , , and . DATE, page 78-83. IEEE, (2019)Aging in CMOS RF Linear Power Amplifiers: Experimental Comparison and Modeling., , , , , , and . ISCAS, page 1-5. IEEE, (2019)