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Disambiguation of "Fischer, Inga A."

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Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers

, , , , , , , and . Journal of magnetism and magnetic materials, (2022)
DOI: 10.1016/j.jmmm.2021.168731

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A. Laukemann

A. Laukemann

A. Laukemann

A. Vo{\ss}

A. Afkari

 

Other publications of authors with the same name

Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors, , , , , , , and . Solid-State Electronics, (August 2015)Contact resistivities of antimony-doped n-type Ge 1− x Sn x, , , , , , , , and . Semiconductor Science and Technology, 31 (8): 08LT01 (2016)Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn, , , , , , , , , and . Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics, , , , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 45-49. (September 2021)Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1-x-ySny heterostructure model for low power FET applications, , , and . Semiconductor science and technology, 33 (11): 114001 (2018)Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells, , , , , , , , , and 5 other author(s). Physical Review Materials, 4 (2): 024601 (2020)Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, , , , , , , , , and 2 other author(s). Opt. Lett., 40 (13): 3209--3212 (July 2015)Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source, , , , , , and . IEEE Photonics Journal, (2022)Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001), , , , and . 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 0027-0031. IEEE, (2018)Comparison of spin lifetimes in n -Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements, , , , , , , , and . Semiconductor Science and Technology, 28 (1): 015018 (2013)