%0 Journal Article %1 Weisshaupt_2020 %A "Weißhaupt, David" %A "Funk, Hannes Simon" %A "Kern, Michal" %A "Dettling, Marco M." %A "Schwarz, Daniel" %A Öehme, Michael" %A "Sürgers, Christoph" %A "van Slageren, Joris" %A "Fischer, Inga A." %A "Schulze, Joerg" %D 2020 %J Journal of Physics: Condensed Matter %K iht j.schulze.iht j.schulze.ihtsend:unibiblio journal journalsend:unibibliosend:unibiblio %N 8 %P 085703 %R 10.1088/1361-648x/abcb68 %T Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn %U https://doi.org/10.1088%2F1361-648x%2Fabcb68 %V 33 %X Low-temperature magnetoresistance measurements of n- and p-doped germanium–tin (Ge1-y Sn y ) layers with Sn concentrations up to 8% show contributions arising from effects of weak localization for n-type and weak antilocalization for p-type doped samples independent of the Sn concentration. Calculations of the magnetoresistance using the Hikami–Larkin–Nagaoka model for two-dimensional transport allow us to extract the phase-coherence length for all samples as well as the spin–orbit length for the p-type doped samples. For pure Ge, we find phase-coherence lengths as long as (349.0 ± 1.4) nm and (614.0 ± 0.9) nm for n-type and p-type doped samples, respectively. The phase-coherence length decreases with increasing Sn concentration. From the spin–orbit scattering length, we determine the spin-diffusion scattering length in the range of 20–30 nm for all highly degenerate p-type doped samples irrespective of Sn concentration. These results show that Ge1-y Sn y is a promising material for future spintronic applications.

@article{Weisshaupt_2020, abstract = {Low-temperature magnetoresistance measurements of n- and p-doped germanium–tin (Ge1-y Sn y ) layers with Sn concentrations up to 8% show contributions arising from effects of weak localization for n-type and weak antilocalization for p-type doped samples independent of the Sn concentration. Calculations of the magnetoresistance using the Hikami–Larkin–Nagaoka model for two-dimensional transport allow us to extract the phase-coherence length for all samples as well as the spin–orbit length for the p-type doped samples. For pure Ge, we find phase-coherence lengths as long as (349.0 ± 1.4) nm and (614.0 ± 0.9) nm for n-type and p-type doped samples, respectively. The phase-coherence length decreases with increasing Sn concentration. From the spin–orbit scattering length, we determine the spin-diffusion scattering length in the range of 20–30 nm for all highly degenerate p-type doped samples irrespective of Sn concentration. These results show that Ge1-y Sn y is a promising material for future spintronic applications.}, added-at = {2020-12-11T11:07:31.000+0100}, author = {"Weißhaupt, David" and "Funk, Hannes Simon" and "Kern, Michal" and "Dettling, Marco M." and "Schwarz, Daniel" and "Oehme, Michael" and "Sürgers, Christoph" and "van Slageren, Joris" and "Fischer, Inga A." and "Schulze, Joerg"}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/269070cd8e3ef6ca098de8562b12e8f5b/ihtpublikation}, doi = {10.1088/1361-648x/abcb68}, interhash = {af5311593715c25c8c716370702a1402}, intrahash = {69070cd8e3ef6ca098de8562b12e8f5b}, journal = {Journal of Physics: Condensed Matter}, keywords = {iht j.schulze.iht j.schulze.ihtsend:unibiblio journal journalsend:unibibliosend:unibiblio}, month = {12}, number = 8, pages = 085703, timestamp = {2021-11-12T15:56:00.000+0100}, title = {Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn}, url = {https://doi.org/10.1088%2F1361-648x%2Fabcb68}, volume = 33, year = 2020 }