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Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn

D. "Weißhaupt, H. "Funk, M. "Kern, M. "Dettling, D. "Schwarz, M. Öehme, C. "Sürgers, J. "van Slageren, I. "Fischer, and J. "Schulze. Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)
DOI: 10.1088/1361-648x/abcb68

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Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% SnD. "Weißhaupt, H. "Funk, M. "Kern, M. "Dettling, D. "Schwarz, M. Öehme, C. "Sürgers, J. "van Slageren, I. "Fischer, and J. "Schulze. Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)Fabrication of GePb-Alloys by Means of Pulsed Laser Induced EpitaxyM. Weiser, D. Schwarz, H. Funk, D. Weißhaupt, C. Serra, J. Schulze, and S. Chiussi. 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 1-6. IEEE, (2019)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)S. Bechler, M. Kern, H. Funk, G. Colston, I. Fischer, D. Weißhaupt, M. Myronov, J. Slageren, and J. Schulze. Semiconductor science and technology, 33 (9): 095008 (2018)Alloy Stability of Ge1-xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam EpitaxyD. Schwarz, H. Funk, M. Oehme, and J. Schulze. Journal of Electronic Materials, (2020)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)S. Bechler, M. Kern, H. Funk, G. Colston, I. Fischer, D. Weißhaupt, M. Myronov, J. Van Slageren, and J. Schulze. Semiconductor Science and Technology, 33 (9): 95008 (2018)Local growth of graphene on Cu and Cu0.88Ni0.12 foil substratesH. Funk, J. Ng, N. Kamimura, Y. Xie, and J. Schulze. 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 31-36. IEEE, (2017)Tuning of Curie temperature in Mn5Ge3 filmsY. Xie, M. Birowska, H. Funk, I. Fischer, D. Schwarz, J. Schulze, Y. Zeng, M. Helm, S. Zhou, and S. Prucnal. Journal of applied physics, 131 (10): 105102 (2022)Capacitance-Voltage Measurements on MBE-Grown Ge-SixGe1-x-ySny Heterojunction pn-Diodes for Material CharacterisationD. "Schwarz, H. "Funk, ". Kateryna", ". Michael", and ". Joerg". ECS Transactions, 98 (5): 339-349 (September 2020)Hydrogen-Assisted Molecular Beam Epitaxy of SiGeSnD. Schwarz, J. Ziegler, H. Funk, J. Schulze, and M. Oehme. ECS Meeting Abstracts, MA2022-02 (32): 1164 (October 2022)Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum WellP. Povolni, D. Schwarz, C. Clausen, Y. Elogail, H. Funk, M. Oehme, D. Weißhaupt, and J. Schulze. 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 7-12. Piscataway, NJ, IEEE, (2019)

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Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn

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Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn