%0 Journal Article %1 Bechler2018 %A Bechler, Stefan %A Kern, Michal %A Funk, Hannes Simon %A Colston, Gerard %A Fischer, Inga Anita %A Weißhaupt, David %A Myronov, Maksym %A Van Slageren, Joris %A Schulze, Jörg %D 2018 %J Semiconductor Science and Technology %K myown %N 9 %P 95008 %R 10.1088/1361-6641/aad4cf %T Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111) %V 33 %X Mn5Ge3 can be used as a ferromagnetic contact material to fabricate spintronic devices. Here, we show that Mn5Ge3 can be fabricated with a simple germanidation process by evaporating Mn on undoped and doped Ge on Si followed by a thermal annealing step to form the ferromagnetic Mn5Ge3 phase. This solid phase preparation of Mn5Ge3 is a robust process with a minor dependence on the annealing parameters. The formation of Mn5Ge3 can be realized using undoped as well as highly doped p-Ge and n-Ge with different doping levels. The interface of Mn5Ge3 is atomically sharp which leads to very low contact resistivities < 1 × 10−7 Ωcm2.

@article{Bechler2018, abstract = {Mn5Ge3 can be used as a ferromagnetic contact material to fabricate spintronic devices. Here, we show that Mn5Ge3 can be fabricated with a simple germanidation process by evaporating Mn on undoped and doped Ge on Si followed by a thermal annealing step to form the ferromagnetic Mn5Ge3 phase. This solid phase preparation of Mn5Ge3 is a robust process with a minor dependence on the annealing parameters. The formation of Mn5Ge3 can be realized using undoped as well as highly doped p-Ge and n-Ge with different doping levels. The interface of Mn5Ge3 is atomically sharp which leads to very low contact resistivities < 1 × 10−7 Ωcm2.}, added-at = {2020-10-12T12:49:41.000+0200}, author = {Bechler, Stefan and Kern, Michal and Funk, Hannes Simon and Colston, Gerard and Fischer, Inga Anita and Wei{\ss}haupt, David and Myronov, Maksym and {Van Slageren}, Joris and Schulze, J{\"{o}}rg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/232fff156070f2fada5ed9595aadcbea8/michalkern}, doi = {10.1088/1361-6641/aad4cf}, file = {:C$\backslash$:/Users/iismike/AppData/Local/Mendeley Ltd./Mendeley Desktop/Downloaded/Bechler et al. - 2018 - Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111).pdf:pdf}, interhash = {128b7f645b2c9f7345607e59d0f8c579}, intrahash = {32fff156070f2fada5ed9595aadcbea8}, issn = {13616641}, journal = {Semiconductor Science and Technology}, keywords = {myown}, number = 9, pages = 95008, timestamp = {2020-10-12T10:49:41.000+0200}, title = {Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)}, volume = 33, year = 2018 }