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Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates, , , , and . 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 31-36. IEEE, (2017)Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn, , , , , , , , , and . Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), , , , , , , , and . Semiconductor science and technology, 33 (9): 095008 (2018)Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, , , , , , and . 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 1-6. IEEE, (2019)Alloy Stability of Ge1-xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy, , , and . Journal of Electronic Materials, (2020)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), , , , , , , , and . Semiconductor Science and Technology, 33 (9): 95008 (2018)Tuning of Curie temperature in Mn5Ge3 films, , , , , , , , , and . Journal of applied physics, 131 (10): 105102 (2022)Capacitance-Voltage Measurements on MBE-Grown Ge-SixGe1-x-ySny Heterojunction pn-Diodes for Material Characterisation, , , , and . ECS Transactions, 98 (5): 339-349 (September 2020)Hydrogen-Assisted Molecular Beam Epitaxy of SiGeSn, , , , and . ECS Meeting Abstracts, MA2022-02 (32): 1164 (October 2022)Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3, , , , , , , , and . Semiconductor science and technology, 37 (6): 065009 (2022)