%0 Journal Article %1 Schulze_2015 %A Schulze, Jörg %A Blech, Andreas %A Datta, Arnab %A Fischer, Inga A. %A Hähnel, Daniel %A Naasz, Sandra %A Rolseth, Erlend %A Tropper, Eva-Maria %D 2015 %I Elsevier BV %J Solid-State Electronics %K iht j.schulze.iht journal %P 59--64 %R 10.1016/j.sse.2015.01.013 %T Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors %U https://doi.org/10.1016%2Fj.sse.2015.01.013 %V 110

@article{Schulze_2015, added-at = {2018-11-16T13:59:34.000+0100}, author = {Schulze, Jörg and Blech, Andreas and Datta, Arnab and Fischer, Inga A. and Hähnel, Daniel and Naasz, Sandra and Rolseth, Erlend and Tropper, Eva-Maria}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/236d98da7a9140c73e755dd660b8d87e9/ihtpublikation}, doi = {10.1016/j.sse.2015.01.013}, interhash = {a01bb253ef79278c137ece3a374883f8}, intrahash = {36d98da7a9140c73e755dd660b8d87e9}, journal = {Solid-State Electronics}, keywords = {iht j.schulze.iht journal}, month = aug, pages = {59--64}, publisher = {Elsevier {BV}}, timestamp = {2018-11-16T12:59:34.000+0100}, title = {Vertical Ge and {GeSn} heterojunction gate-all-around tunneling field effect transistors}, url = {https://doi.org/10.1016%2Fj.sse.2015.01.013}, volume = 110, year = 2015 }