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Equivalent circuit of fast Ge on Si p-i-n photodiodes

S. Klinger, N. Moreno, Y. Sánchez Quintas, B. Wang, M. Berroth, M. Kaschel, M. Oehme, E. Kasper, and J. Schulze. Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), page 89--92. Berlin, Germany, (2010)

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Dr. phil. Christian Jörg University of Stuttgart

Fabian Jörg University of Stuttgart

Jörg Desel

Das ist InformatikJ. Desel (Eds.) Springer, (2001)

Das ist InformatikJ. Desel (Eds.) Springer, (2001)Hilfreiche Hilfe Methode, Implementierung und Evaluation eines Verfahrens zur Adaption an das prozedurale WissenD. Iglezakis. Kath. Universität Eichstätt-Ingolstadt, Aachen, (2007)Hilfreiche Hilfe Methode, Implementierung und Evaluation eines Verfahrens zur Adaption an das prozedurale WissenD. Iglezakis. Kath. Universität Eichstätt-Ingolstadt, Aachen, (2007)

Jörg Förstner University of Stuttgart

Jörg Roth University of Stuttgart

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Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modesI. Fischer, L. Augel, T. Kropp, S. Jitpakdeebodin, N. Franz, F. Oliveira, E. Rolseth, T. Maß, T. Taubner, and J. Schulze. Applied Physics Letters, (2016)Approaches for III/V Photonics on SiM. Wiesner, W. Schulz, E. Angelopoulos, J. Burghartz, J. Werner, M. Oehme, J. Schulze, R. Roßbach, M. Jetter, and P. Michler. Physics of semiconductors : 30th International Conference on the Physics of Semiconductors . Seoul, Korea, 25 - 30 July 2010, 1399, page 261-262. Melville, New York, AIP, (2010)Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions.A. Elsayed, and J. Schulze. MIPRO, page 7-11. IEEE, (2018)Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures.L. Seidel, D. Schwarz, M. Oehme, A. Causevic, H. Funk, D. Weißhaupt, F. Berkmann, and J. Schulze. MIPRO, page 55-59. IEEE, (2021)The Zener-Emitter : Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light sourceR. Koerner, M. Oehme, K. Kostecki, I. Fischer, E. Rolseth, S. Bechler, M. Yorgidis, A. Blech, O. Latzl, and J. Schulze. 2016 74th Annual Device Research Conference (DRC), page 1-2. IEEE, (2016)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si SubstratesK. Kostecki, M. Oehme, R. Koerner, D. Widmann, M. Gollhofer, S. Bechler, G. Mussler, D. Buca, E. Kasper, and J. Schulze. ECS Transactions, 64 (6): 811-818 (2014)Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)M. Oehme, M. Sarlija, D. Hähnel, M. Kaschel, J. Werner, E. Kasper, and J. Schulze. IEEE Transactions on Electron Devices, 57 (11): 2857-2863 (2010)Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural NetworksB. Das, J. Schulze, and U. Ganguly. IEEE electron device letters, 39 (12): 1832-1835 (2018)Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenariosW. Zhang, M. Oehme, K. Matthies, V. Stefani, A. Raju, E. Kasper, and J. Schulze. 2016 46th European Solid-State Device Research Conference (ESSDERC), page 109-112. IEEE, (2016)Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensingY. Kawaguchi, L. Augel, H. Uchida, M. Inoue, J. Schulze, and I. Fischer. 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 0023-0026. IEEE, (2018)