%0 Conference Paper %1 koerner2016zeneremitter %A Koerner, R. %A Oehme, Michael %A Kostecki, K. %A Fischer, I. A. %A Rolseth, E. %A Bechler, S. %A Yorgidis, M. %A Blech, A. %A Latzl, O. %A Schulze, Jörg %B 2016 74th Annual Device Research Conference (DRC) %D 2016 %I IEEE %K %P 1-2 %R 10.1109/DRC.2016.7548478 %T The Zener-Emitter : Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source %X While monolithically integrated light sources for Si photonics have been investigated using Ge and GeSn on Si substrates 1-3, the challenges in material quality and efficiency remain to be solved. Turning the Group-IV material into a direct semiconductor for CMOS compatible concepts 4 promises enhanced electrical to optical conversion efficiencies. However, the red-shift in emitting wavelength is challenging for the peripheral devices such as modulators and photodetectors in complex optoelectronic integrated circuits (OEICs) 5. We investigated a new concept by utilizing a reverse biased Ge p<sup>+</sup>n Zener diode for injection of electrons into a forward biased light emitting Ge p<sup>+</sup>-i-n diode providing holes for the radiative transition. In Ge, the direct band-to-band tunneling (BTBT) dominates over the phonon assisted indirect BTBT, which is highly beneficial for the Zener-Emitter 6. Moreover, possible low voltage operation due to highly conductive Ge tunnel diodes and avoidance of current crowding effects by the high-energetic electron filtering mechanism of Zener diodes are further increasing the electrical injection efficiency 7. %@ 978-1-5090-2828-3 and 978-1-5090-2829-0

@inproceedings{koerner2016zeneremitter, abstract = {While monolithically integrated light sources for Si photonics have been investigated using Ge and GeSn on Si substrates [1-3], the challenges in material quality and efficiency remain to be solved. Turning the Group-IV material into a direct semiconductor for CMOS compatible concepts [4] promises enhanced electrical to optical conversion efficiencies. However, the red-shift in emitting wavelength is challenging for the peripheral devices such as modulators and photodetectors in complex optoelectronic integrated circuits (OEICs) [5]. We investigated a new concept by utilizing a reverse biased Ge p<sup>+</sup>n Zener diode for injection of electrons into a forward biased light emitting Ge p<sup>+</sup>-i-n diode providing holes for the radiative transition. In Ge, the direct band-to-band tunneling (BTBT) dominates over the phonon assisted indirect BTBT, which is highly beneficial for the Zener-Emitter [6]. Moreover, possible low voltage operation due to highly conductive Ge tunnel diodes and avoidance of current crowding effects by the high-energetic electron filtering mechanism of Zener diodes are further increasing the electrical injection efficiency [7].}, added-at = {2023-08-31T14:48:41.000+0200}, author = {Koerner, R. and Oehme, Michael and Kostecki, K. and Fischer, I. A. and Rolseth, E. and Bechler, S. and Yorgidis, M. and Blech, A. and Latzl, O. and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/207bb6d37188c36caf0a8ba21d256d821/puma-wartung}, booktitle = {2016 74th Annual Device Research Conference (DRC)}, doi = {10.1109/DRC.2016.7548478}, eventdate = {2016-06-19/2016-06-22}, eventtitle = {2016 74th Annual Device Research Conference (DRC)}, interhash = {69bc8cf6b44085e0b4ad584cf936d82b}, intrahash = {07bb6d37188c36caf0a8ba21d256d821}, isbn = {{978-1-5090-2828-3} and {978-1-5090-2829-0}}, keywords = {}, language = {eng}, pages = {1-2}, publisher = {IEEE}, timestamp = {2023-08-31T12:48:41.000+0200}, title = {The Zener-Emitter : Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source}, venue = {Newark, DE}, year = 2016 }