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Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source, , , , , , and . IEEE Photonics Journal, (2022)Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures., , , , , , , and . MIPRO, page 55-59. IEEE, (2021)High mobility Ge 2DHG based MODFETs for low-temperature applications, , , , , , , and . Semiconductor science and technology, 38 (3): 035007 (2023)Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates, , , , , , , , and . 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 0032-0035. IEEE, (2018)Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si, , , , , , and . Microelectronics journal, 123 (May): 105404 (2022)Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors, , , , , , , , , and . Applied physics letters, 122 (12): 121701 (2023)Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx, , , , , , and . Optical Materials Express, 13 (3): 752-763 (2023)Influence of material and geometry parameters on resonance linewidths of plasmonic modes in gratings made from highly doped Ge1−xSnx, , , and . Journal of physics. D, Applied physics, 57 (43): 435103 (2024)Plasmonic gratings from highly doped Ge1−ySny films on Si, , , , , , , , , and 1 other author(s). Journal of physics. D, Applied physics, 54 (44): 445109 (2021)Untersuchung der CMOS-kompatiblen Materialien Aluminium, Nickel, Titan, Germanium und Germanium-Zinn für plasmonische Anwendungen. Universität Stuttgart, Stuttgart, Dissertation, (2022)