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Disambiguation of "Rolseth, Erlend"

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Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes

, , , , , , , , , and . Applied Physics Letters, (2016)
DOI: http://dx.doi.org/10.1063/1.4942393

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Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied physics letters, 108 (7): 071108 (2016)Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si, , , , , , , , , and . Applied Physics Letters, 105 (22): 222408 (2014)Contact resistivities of antimony-doped n-type Ge1-xSnx, , , , , , , , and . Semiconductor science and technology, 31 (8): 08LT01 (2016)Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors, , , , , , , and . Solid-state electronics, (2015)Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied Physics Letters, (2016)Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors, , , , , , , and . Solid-State Electronics, (August 2015)Contact resistivities of antimony-doped n-type Ge 1− x Sn x, , , , , , , , and . Semiconductor Science and Technology, 31 (8): 08LT01 (2016)Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges, , , , , , , , , and 2 other author(s). 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 57-65. IEEE, (2017)Experimental studies on germanium-tin p-channel tunneling field effect transistors. Universität Stuttgart, Stuttgart, Dissertation, (2017)Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories, , , , , and . IEEE transactions on device and materials reliability, 17 (1): 80-89 (2017)