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Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

S. Choudhary, M. Yogesh, D. Schwarz, H. Funk, S. Ghosh, S. Sharma, J. Schulze, and K. Gonsalves. 41 (5): 052203 (2023)
DOI: 10.1116/6.0002767

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A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage AmplificationS. Choudhary, D. Schwarz, H. Funk, D. Weißhaupt, R. Khosla, S. Sharma, and J. Schulze. IEEE transactions on electron devices, 69 (5): 2725-2731 (2022)Process Optimizations for Ge-On-Si Depletion Mode Transistors Using Mesa ArchitectureS. Choudhary, D. Schwarz, H. Funk, K. Sharma, S. Sharma, and J. Schulze. 2022 International Symposium on Semiconductor Manufacturing (ISSM), IEEE, (2022)Low-Temperature Processed Ni/GeSn Optimal Contacts for Junctionless GeSn-on-Si FinFETsS. Choudhary, D. Schwarz, H. Funk, S. Sharma, and J. Schulze. IEEE transactions on electron devices, 71 (9): 5182-5189 (2024)Automatic Hyperlinking of Engineering Drawing Documents.P. Banerjee, S. Choudhary, S. Das, H. Majumdar, R. Roy, and B. Chaudhuri. DAS, page 102-107. IEEE Computer Society, (2016)Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage StressS. Choudhary, D. Schwarz, H. Funk, R. Khosla, S. Sharma, and J. Schulze. IEEE Transactions on Nanotechnology, (2021)Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage StressS. Choudhary, D. Schwarz, H. Funk, R. Khosla, S. Sharma, and J. Schulze. IEEE transactions on nanotechnology, (2021)Novel process integration flow of germanium-on-silicon FinFETs for low-power technologiesS. Choudhary, M. Yogesh, D. Schwarz, H. Funk, S. Ghosh, S. Sharma, J. Schulze, and K. Gonsalves. 41 (5): 052203 (2023)

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Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

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Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies