%0 Journal Article %1 choudhary2023novel %A Choudhary, Sumit %A Yogesh, Midathala %A Schwarz, Daniel %A Funk, Hannes S. %A Ghosh, Subrata %A Sharma, Satinder K. %A Schulze, Jörg %A Gonsalves, Kenneth E. %D 2023 %I American Institute of Physics %K %N 5 %P 052203 %R 10.1116/6.0002767 %T Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies %V 41

@article{choudhary2023novel, added-at = {2024-01-23T10:57:34.000+0100}, affiliation = {Sharma, SK (Corresponding Author), Indian Inst Technol IIT, Sch Comp \& Elect Engn, Mandi 175005, Himachal Prades, India. Schulze, J (Corresponding Author), Indian Inst Technol IIT, Sch Chem Sci, Mandi 175005, Himachal Prades, India. Choudhary, Sumit; Sharma, Satinder K., Indian Inst Technol IIT, Sch Comp \& Elect Engn, Mandi 175005, Himachal Prades, India. Yogesh, Midathala; Ghosh, Subrata; Schulze, Jorg, Indian Inst Technol IIT, Sch Chem Sci, Mandi 175005, Himachal Prades, India. Schwarz, Daniel; Funk, Hannes S., Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany. Gonsalves, Kenneth E., Indian Inst Technol IIT, Former Address Sch Basic Sci, Mandi 175005, Himachal Prades, India.}, author = {Choudhary, Sumit and Yogesh, Midathala and Schwarz, Daniel and Funk, Hannes S. and Ghosh, Subrata and Sharma, Satinder K. and Schulze, Jörg and Gonsalves, Kenneth E.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/262bed4ae8cffbef5e9418a40dedcefb2/unibiblio}, doi = {10.1116/6.0002767}, interhash = {cf48f94051e5d6d21eece539ce0341fb}, intrahash = {62bed4ae8cffbef5e9418a40dedcefb2}, issn = {{2166-2746} and {2166-2754}}, keywords = {}, language = {eng}, number = 5, pages = 052203, publisher = {American Institute of Physics}, research-areas = {Engineering; Science \& Technology - Other Topics; Physics}, timestamp = {2024-01-23T09:57:34.000+0100}, title = {Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies}, unique-id = {WOS:001052318700001}, volume = 41, year = 2023 }