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Disambiguation of "Oehme, Michael"

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Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%

, , , , , , , and . Surface and interface analysis, 49 (4): 297-302 (2017)
DOI: 10.1002/sia.6134

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Dr. Michael Oehme University of Stuttgart

Univ. -Prof. Dr. Michael Buchmeiser University of Stuttgart

Replication data of Buchmeiser group for: "Synthetic and Structural Peculiarities of Neutral and Cationic Molybdenum Imido and Tungsten Oxo Alkylidene Complexes Bearing Weakly Coordinating N-Heterocyclic Carbenes", , , , , , and . Dataset, (2024)Related to: M. R. Buchmeiser, D. Wang, R. Schowner, L. Stöhr, F. Ziegler, S. Sen, W. Frey,; Synthetic and Structural Peculiarities of Neutral and Cationic Molybdenum Imido and Tungsten Oxo Alkylidene Complexes Bearing Weakly Coordinating N-Heterocyclic Carbenes; Eur. J. Inorg. Chem., in press (2024). doi: 10.1002/ejic.202400082.

Michael Böhm

Michael Funk

Hon. -Prof. Dr. -Ing. Michael Bauer University of Stuttgart

 

Other publications of authors with the same name

Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy, , , , , , , , , and . Microelectronic Engineering, (August 2014)Contact resistivities of antimony-doped n-type Ge 1− x Sn x, , , , , , , , and . Semiconductor Science and Technology, 31 (8): 08LT01 (2016)Dislocation luminescence in highly doped degenerated germanium at room temperature, , , , and . physica status solidi c, 10 (1): 56-59 (2013)Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001), , , , , , , , and . (2012)High frequency behaviour of Ge pin junctions, , , , and . International Workshop on New Group IV Semiconductor Nanoelectronics, Digest of papers, page 1--3. Sendai, Japan, (2010)Fast Ge p-i-n Photodetectors on Si, , , , and . International SiGe Technology and Device Meeting, page 1--2. Princeton, NJ, USA, (2006)Special Etch Technologies for Ge/Si Devices, , , , , , and . (2003)Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn, , , , , , , , , and . Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics, , , , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 45-49. (September 2021)Two-dimensional hole gases in SiGeSn alloys, , , , , , and . Semiconductor science and technology, 37 (5): 055009 (2022)