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Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001), , , , , , , , and . (2012)Transverse-Mode Analysis of Red-Emitting Highly Polarized Vertical-Cavity Surface-Emitting Lasers, , , , , , and . (2011)Red single-photon emission from an InP/GaInP quantum dot embedded in a planar monolithic microcavity, , , , and . (2008)Talk:Red AlGaInP-VECSEL emitting at around 665 nm: strain compensation and performance comparison of different epitaxial designs, , , and . (2012)Poster:Fine structure tuning in self-assembled (In,Ga)As quantum dots by uniaxial stress, , , , , , and . (2009)Talk:Wavelength tunable red AlGaInP-VECSEL emitting at around 660 nm, , , , , , and . (2011)Low Threshold InP/AlGaInP Quantum Dot In-Plane Laser Emitting at 638 nm, , , , and . (2009)Wavelength tunable red AlGaInP-VECSEL emitting at around 660 nm, , , , , , and . (2011)Red AlGaInP-VECSEL emitting at around 665 nm: strain compensation and performance comparison of different epitaxial designs, , , and . (2012)Talk:Self-assembled InP/AlGaInP quantum dots as active region for lasers in the red spectral range, , , , and . (2010)