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Dislocation luminescence in highly doped degenerated germanium at room temperature

, , , , and . physica status solidi c, 10 (1): 56-59 (2013)
DOI: 10.1002/pssc.201200395

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Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si, , , , , and . Gettering and Defect Engineering in Semiconductor Technology XIV : GADEST 2011, 178, page 25-30. Durnten, Trans Tech Publications, (2011)Dislocation luminescence in highly doped degenerated germanium at room temperature, , , , and . physica status solidi c, 10 (1): 56-59 (2013)Ge and GeSn Light Emitters on Si, , , , , , , , and . Gettering and Defect Engineering in Semiconductor Technology XVI, volume 242 of Solid State Phenomena, page 353-360. Trans Tech Publications, (2016)Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers, , , , , , , and . Gettering and Defect Engineering in Semiconductor Technology XVI, 242, page 361-367. Pfaffikon, Trans Tech Publications, (2016)Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes, , , , , and . Advances in OptoElectronics, (2012)