Author of the publication

Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si

, , , , , and . Gettering and Defect Engineering in Semiconductor Technology XIV : GADEST 2011, 178, page 25-30. Durnten, Trans Tech Publications, (2011)
DOI: 10.4028/www.scientific.net/SSP.178-179.25

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, , , , , , , , , and 2 other author(s). Opt. Lett., 40 (13): 3209--3212 (July 2015)Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes, , , , , and . Advances in OptoElectronics, (2012)Dislocation luminescence in highly doped degenerated germanium at room temperature, , , , and . physica status solidi c, 10 (1): 56-59 (2013)Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si, , , , , and . Gettering and Defect Engineering in Semiconductor Technology XIV : GADEST 2011, 178, page 25-30. Durnten, Trans Tech Publications, (2011)Luminescence of strained Ge on GeSn virtual substrate grown on Si (001), , , , , and . Silicon Photonics XII, 10108, page 101080D. SPIE, (2017)Ge and GeSn Light Emitters on Si, , , , , , , , and . Gettering and Defect Engineering in Semiconductor Technology XVI, volume 242 of Solid State Phenomena, page 353-360. Trans Tech Publications, (2016)Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers, , , , , , , and . Gettering and Defect Engineering in Semiconductor Technology XVI, 242, page 361-367. Pfaffikon, Trans Tech Publications, (2016)