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Recent advances in 3D VLSI integration., , , , , , , , , and 7 other author(s). ICICDT, page 1-4. IEEE, (2016)Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities., , , , , , , , , and 6 other author(s). ESSDERC, page 121-124. IEEE, (2012)FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration., , , , , , , , , and 6 other author(s). ESSDERC, page 110-113. IEEE, (2014)Recent advances in 3D VLSI integration., , , , , , , , , and 7 other author(s). ICICDT, page 1-4. IEEE, (2016)Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability?, , , , , , , , , and 8 other author(s). FET, volume 7 of Procedia Computer Science, page 266-268. Elsevier, (2011)3D monolithic integration., , , , , , , , , and 6 other author(s). ISCAS, page 2233-2236. IEEE, (2011)Guidelines for intermediate back end of line (BEOL) for 3D sequential integration., , , , , , , , , and 18 other author(s). ESSDERC, page 252-255. IEEE, (2017)Opportunities brought by sequential 3D CoolCube™ integration., , , , , , , , , and 11 other author(s). ESSDERC, page 226-229. IEEE, (2016)