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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectronics Reliability, (2018)Hot-carrier degradation in single-layer double-gated graphene field-effect transistors., , , , , , , and . IRPS, page 2. IEEE, (2015)Reliability of next-generation field-effect transistors with transition metal dichalcogenides., , , , , , and . IRPS, page 5. IEEE, (2018)Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors., , , , , , , , , and 1 other author(s). IRPS, page 2. IEEE, (2018)Utilizing NBTI for Operation Detection of Integrated Circuits., , and . VDAT, volume 1066 of Communications in Computer and Information Science, page 190-201. Springer, (2019)Comphy - A compact-physics framework for unified modeling of BTI., , , , , , , , , and 4 other author(s). Microelectronics Reliability, (2018)Characterization and modeling of charge trapping: From single defects to devices., , , , , , , , and . ICICDT, page 1-4. IEEE, (2014)Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors., , , , , , and . ESSDERC, page 172-175. IEEE, (2015)