Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.

Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Östling, T. Mueller, M. Lemme, and T. Grasser. IRPS, page 2. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Östling, Mikael

add a person with the name Östling, Mikael

Other publications of authors with the same name

Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors.M. Sandén, B. Malm, J. Grahn, and M. Östling. Microelectronics Reliability, 41 (6): 881-886 (2001)Step tunneling-enhanced hot-electron injection in vertical graphene base transistors.S. Vaziri, M. Belete, A. Smith, E. Litta, G. Lupina, M. Lemme, and M. Östling. ESSDERC, page 198-201. IEEE, (2015)High power devices in wide bandgap semiconductors.M. Östling. SCIENCE CHINA Information Sciences, 54 (5): 1087-1093 (2011)Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer.M. Olyaei, B. Malm, E. Litta, P. Hellstrom, and M. Östling. ESSDERC, page 361-364. IEEE, (2014)Bipolar Technology.J. Grahn, and M. Östling. The VLSI Handbook, CRC Press, (1999)CMOS compatible ALD high-k double slot grating couplers for on-chip optical interconnects.M. Naiini, C. Henkel, B. Malm, and M. Östling. ESSDERC, page 93-96. IEEE, (2012)An integration approach for graphene double-gate transistors.S. Vaziri, A. Smith, C. Henkel, M. Östling, M. Lemme, G. Lupina, G. Lippert, J. Dabrowski, and W. Mehr. ESSDERC, page 250-253. IEEE, (2012)Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Östling, M. Lemme, and T. Grasser. ESSDERC, page 172-175. IEEE, (2015)PDMS-supported graphene transfer using intermediary polymer layers.S. Vaziri, A. Smith, G. Lupina, M. Lemme, and M. Östling. ESSDERC, page 309-312. IEEE, (2014)Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Östling, T. Mueller, M. Lemme, and T. Grasser. IRPS, page 2. IEEE, (2015)

PUMA

Disambiguation of "Östling, Mikael"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Östling, Mikael"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.