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A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation.

, , , , , , , and . J. Solid-State Circuits, 46 (1): 76-84 (2011)

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A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management., , , , , , , , and . ISSCC, page 456-457. IEEE, (2009)Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM Design., , , , , , and . IEEE Design & Test of Computers, 28 (1): 22-31 (2011)A 1.1 GHz 12 µA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications., , , , , , , , , and 7 other author(s). J. Solid-State Circuits, 43 (1): 172-179 (2008)Process, Temperature, and Supply-Noise Tolerant 45nm Dense Cache Arrays With Diffusion-Notch-Free (DNF) 6T SRAM Cells and Dynamic Multi-Vcc Circuits., , , , , , , , , and 3 other author(s). J. Solid-State Circuits, 44 (4): 1199-1208 (2009)A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology., , , , , , , , , and . J. Solid-State Circuits, 44 (1): 148-154 (2009)A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation., , , , , , , and . J. Solid-State Circuits, 46 (1): 76-84 (2011)A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry., , , , , , , , and . ISSCC, page 230-232. IEEE, (2012)A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications., , , , , , , , , and 6 other author(s). ISSCC, page 324-606. IEEE, (2007)2nd generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology., , , , , , , , , and 2 other author(s). VLSIC, page 1-2. IEEE, (2014)A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology., , , , , , , , , and . ISSCC, page 376-377. IEEE, (2008)