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Disambiguation of "Reiner, R."

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Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC

, , , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)

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apl. Prof. Dr. Reiner Vogg University of Stuttgart

Reiner Dietz University of Stuttgart

R. Koerner

R. Watty

Dr. Reiner Rössle University of Stuttgart

 

Other publications of authors with the same name

Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC, , , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)A 600 V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices, , , , , , and . in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)Monolithic Integrated Quasi-Normally-Off Gate Driver and 600 V GaN-on-Si HEMT, , , , , , , , and . in Proc. 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, (2015)Quasi-normally-off GaN gate driver for high slew-rate D-Mode GaN-on-Si HEMTs, , , , , , , , and . 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), page 373-376. Piscataway, NJ, IEEE, (2015)Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC, , , , , , and . PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, page 1-7. (July 2020)Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC, , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)A GaN-on-Si Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode Control, , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2019)Single-Input GaN Gate Driver based on Depletion-Mode Logic integrated with a 600 V GaN-on-Si Power Transistor, , , , , , and . in Proc. 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2016)GaN Active Diode for Low-Loss Rectification, , , , , , and . in. Proc. 33nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors, , , , , and . in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2020)