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Disambiguation of "Funk, Hannes"

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S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

, , , , , , , , , , , , and . Solid State Devices and Materials, 55, 4S, page 04EF03. Tokyo, IOP Publishing, (2016)
DOI: 10.7567/JJAP.55.04EF03

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Michael Funk

Hannes Eschmann University of Stuttgart

Michael Funk

Michael Funk

Hannes Mandler University of Stuttgart

 

Other publications of authors with the same name

S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode, , , , , , , , , and 3 other author(s). Solid State Devices and Materials, 55, 4S, page 04EF03. Tokyo, IOP Publishing, (2016)Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn, , , , , , , , , and . Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics, , , , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 45-49. (September 2021)Process Optimizations for Ge-On-Si Depletion Mode Transistors Using Mesa Architecture, , , , , and . 2022 International Symposium on Semiconductor Manufacturing (ISSM), page 1-4. (December 2022)Alloy Stability of Ge1-xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy, , , and . Journal of Electronic Materials, (2020)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), , , , , , , , and . Semiconductor science and technology, 33 (9): 095008 (2018)Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, , , , , , and . 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 1-6. IEEE, (2019)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), , , , , , , , and . Semiconductor Science and Technology, 33 (9): 95008 (2018)Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers, , , , , , , and . Journal of Magnetism and Magnetic Materials, (March 2022)A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification, , , , , , and . IEEE transactions on electron devices, 69 (5): 2725-2731 (2022)