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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.

C. Kim, J. Cho, W. Jeong, I. Park, H. Park, D. Kim, D. Kang, S. Lee, J. Lee, W. Kim, J. Park, Y. Ahn, J. Lee, J. Lee, S. Kim, H. Yoon, J. Yu, N. Choi, Y. Kwon, N. Kim, H. Jang, J. Park, S. Song, Y. Park, J. Bang, S. Hong, B. Jeong, H. Kim, C. Lee, Y. Min, I. Lee, I. Kim, S. Kim, D. Yoon, K. Kim, Y. Choi, M. Kim, H. Kim, P. Kwak, J. Ihm, D. Byeon, J. Lee, K. Park, and K. Kyung. ISSCC, page 202-203. IEEE, (2017)

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Moon Kwang Jeong University of Stuttgart

Moon Young Jeong University of Stuttgart

Other publications of authors with the same name

Adaptive Supply Voltage for Low-Power Ripple-Carry and Carry-Select Adders.H. Suzuki, W. Jeong, and K. Roy. IEICE Transactions, 90-C (4): 865-876 (2007)Hardware architecture and VLSI implementation of a low-power high-performance polyphase channelizer with applications to subband adaptive filtering.Y. Wang, H. Mahmoodi, L. Chiou, H. Choo, J. Park, W. Jeong, and K. Roy. ICASSP (5), page 97-100. IEEE, (2004)A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface.C. Kim, J. Ryu, T. Lee, H. Kim, J. Lim, J. Jeong, S. Seo, H. Jeon, B. Kim, I. Lee and 12 other author(s). J. Solid-State Circuits, 47 (4): 981-989 (2012)A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory.C. Kim, D. Kim, W. Jeong, H. Kim, I. Park, H. Park, J. Lee, J. Park, Y. Ahn, J. Lee and 20 other author(s). J. Solid-State Circuits, 53 (1): 124-133 (2018)A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate.W. Jeong, J. Im, D. Kim, S. Nam, D. Shim, M. Choi, H. Yoon, D. Kim, Y. Kim, H. Park and 19 other author(s). J. Solid-State Circuits, 51 (1): 204-212 (2016)7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers.D. Kang, W. Jeong, C. Kim, D. Kim, Y. Cho, K. Kang, J. Ryu, K. Kang, S. Lee, W. Kim and 20 other author(s). ISSCC, page 130-131. IEEE, (2016)256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.D. Kang, W. Jeong, C. Kim, D. Kim, Y. Cho, K. Kang, J. Ryu, K. Kang, S. Lee, W. Kim and 19 other author(s). J. Solid-State Circuits, 52 (1): 210-217 (2017)7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.J. Im, W. Jeong, D. Kim, S. Nam, D. Shim, M. Choi, H. Yoon, D. Kim, Y. Kim, H. Park and 24 other author(s). ISSCC, page 1-3. IEEE, (2015)Low Power Adder with Adaptive Supply Voltage.H. Suzuki, W. Jeong, and K. Roy. ICCD, page 103-106. IEEE Computer Society, (2003)Energy-efficient Hardware Architecture and VLSI Implementation of a Polyphase Channelizer with Applications to Subband Adaptive Filtering.Y. Wang, H. Mahmoodi, L. Chiou, H. Choo, J. Park, W. Jeong, and K. Roy. Signal Processing Systems, 58 (2): 125-137 (2010)

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Disambiguation of "Jeong, Woopyo"

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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.

Please choose a person to relate this publication to

Moon Kwang Jeong University of Stuttgart

Moon Young Jeong University of Stuttgart

Other publications of authors with the same name

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PUMA

Disambiguation of "Jeong, Woopyo"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML 11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.

Please choose a person to relate this publication to

Moon Kwang Jeong University of Stuttgart

Moon Young Jeong University of Stuttgart

Other publications of authors with the same name

Disambiguation

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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.