%0 Journal Article %1 journals/jssc/KimKJKPPLPALKYY18 %A Kim, Chulbum %A Kim, Doo-Hyun %A Jeong, Woopyo %A Kim, Hyun-Jin %A Park, Il-Han %A Park, Hyun Wook %A Lee, Jong-Hoon %A Park, Jiyoon %A Ahn, Yang-Lo %A Lee, Ji Young %A Kim, Seungbum %A Yoon, Hyun-Jun %A Yu, Jaedoeg %A Choi, Nayoung %A Kim, Nahyun %A Jang, Hwajun %A Park, Jonghoon %A Song, Seunghwan %A Park, Yongha %A Bang, Jinbae %A Hong, Sanggi %A Choi, Youngdon %A Kim, Moosung %A Kim, Hyunggon %A Kwak, Pansuk %A Ihm, Jeong-Don %A Byeon, Dae-Seok %A Lee, Jin-Yub %A Park, Ki-Tae %A Kyung, Kyehyun %D 2018 %J J. Solid-State Circuits %K dblp %N 1 %P 124-133 %T A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. %U http://dblp.uni-trier.de/db/journals/jssc/jssc53.html#KimKJKPPLPALKYY18 %V 53

@article{journals/jssc/KimKJKPPLPALKYY18, added-at = {2019-07-12T00:00:00.000+0200}, author = {Kim, Chulbum and Kim, Doo-Hyun and Jeong, Woopyo and Kim, Hyun-Jin and Park, Il-Han and Park, Hyun Wook and Lee, Jong-Hoon and Park, Jiyoon and Ahn, Yang-Lo and Lee, Ji Young and Kim, Seungbum and Yoon, Hyun-Jun and Yu, Jaedoeg and Choi, Nayoung and Kim, Nahyun and Jang, Hwajun and Park, Jonghoon and Song, Seunghwan and Park, Yongha and Bang, Jinbae and Hong, Sanggi and Choi, Youngdon and Kim, Moosung and Kim, Hyunggon and Kwak, Pansuk and Ihm, Jeong-Don and Byeon, Dae-Seok and Lee, Jin-Yub and Park, Ki-Tae and Kyung, Kyehyun}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2a57ad8407bd655f58abe51f1db5907d9/dblp}, ee = {https://doi.org/10.1109/JSSC.2017.2731813}, interhash = {b7762f8ab4c56100dc7ac6444a6b593e}, intrahash = {a57ad8407bd655f58abe51f1db5907d9}, journal = {J. Solid-State Circuits}, keywords = {dblp}, number = 1, pages = {124-133}, timestamp = {2019-09-27T06:09:20.000+0200}, title = {A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory.}, url = {http://dblp.uni-trier.de/db/journals/jssc/jssc53.html#KimKJKPPLPALKYY18}, volume = 53, year = 2018 }