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Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions.

, , , and . Microelectronics Reliability, (2016)

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Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications., , , , , , , , and . Microelectronics Reliability, (2017)Physical failure analysis methods for wide band gap semiconductor devices., , , and . IRPS, page 3. IEEE, (2018)New Access to Soft Breakdown Parameters of Low-k Dielectrics Through Localisation-Based Analysis., , , , , , , , , and 1 other author(s). IRPS, page 1-9. IEEE, (2019)Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures., , , and . Microelectronics Reliability, 54 (9-10): 1785-1789 (2014)Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy., , , , , and . Microelectronics Reliability, (2016)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , and . Microelectronics Reliability, (2017)Novel techniques for dopant contrast analysis on real IC structures., , and . Microelectronics Reliability, 52 (9-10): 2098-2103 (2012)Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions., , , and . Microelectronics Reliability, (2016)Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology., , , , , , , and . Microelectronics Reliability, (2018)Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures., , , , , , and . Microelectronics Reliability, (2016)