Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

A. Graff, M. Simon-Najasek, F. Altmann, J. Kuzmík, D. Gregusová, S. Hascik, H. Jung, T. Baur, J. Grünenpütt, and H. Blanck. Microelectronics Reliability, (2017)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Univ. -Prof. Dr. -Ing. Andreas Michalowski University of Stuttgart

Enhanced Scaling of Material Removal Rate with High Surface Quality Through Combined Laser ProcessesM. Buser, M. Hofele, T. Menold, H. Riegel, and A. Michalowski. Lasers in manufacturing and materials processing, (2023)

Prof. Dr. Andreas Hotho

Ontology-based Text Document Clustering.A. Hotho, A. Maedche, and S. Staab. KI, 16 (4): 48-54 (2002)

Ontology-based Text Document Clustering.A. Hotho, A. Maedche, and S. Staab. KI, 16 (4): 48-54 (2002)Clustern mit Hintergrundwissen.A. Hotho. Karlsruhe Institute of Technology, (2004)

Junior-Prof. Dr.-Ing. Andreas Pott

Andreas Kaufmann

Andreas Pahler University of Stuttgart

Other publications of authors with the same name

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.M. Dammann, M. Baeumler, V. Polyakov, P. Brückner, H. Konstanzer, R. Quay, M. Mikulla, A. Graff, and M. Simon-Najasek. Microelectronics Reliability, (2017)Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures.M. Simon-Najasek, S. Hübner, F. Altmann, and A. Graff. Microelectronics Reliability, 54 (9-10): 1785-1789 (2014)Degradation of 0.25 μm GaN HEMTs under high temperature stress test.M. Dammann, M. Baeumler, P. Brückner, W. Bronner, S. Maroldt, H. Konstanzer, M. Wespel, R. Quay, M. Mikulla, A. Graff and 4 other author(s). Microelectronics Reliability, 55 (9-10): 1667-1671 (2015)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.A. Graff, M. Simon-Najasek, F. Altmann, J. Kuzmík, D. Gregusová, S. Hascik, H. Jung, T. Baur, J. Grünenpütt, and H. Blanck. Microelectronics Reliability, (2017)Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials.B. März, A. Graff, R. Klengel, and M. Petzold. Microelectronics Reliability, 54 (9-10): 2000-2005 (2014)Physical failure analysis methods for wide band gap semiconductor devices.A. Graff, M. Simon-Najasek, D. Poppitz, and F. Altmann. IRPS, page 3. IEEE, (2018)Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.M. Dammann, M. Baeumler, P. Brückner, T. Kemmer, H. Konstanzer, A. Graff, M. Simon-Najasek, and R. Quay. Microelectronics Reliability, (2018)Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures.M. Broas, A. Graff, M. Simon-Najasek, D. Poppitz, F. Altmann, H. Jung, and H. Blanck. Microelectronics Reliability, (2016)Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices.C. Monachon, M. Zielinski, J. Berney, D. Poppitz, A. Graff, S. Breuer, and L. Kirste. IRPS, page 6. IEEE, (2018)

PUMA

Disambiguation of "Graff, Andreas"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

Please choose a person to relate this publication to

Univ. -Prof. Dr. -Ing. Andreas Michalowski University of Stuttgart

Prof. Dr. Andreas Hotho

Junior-Prof. Dr.-Ing. Andreas Pott

Andreas Kaufmann

Andreas Pahler University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Graff, Andreas"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

Please choose a person to relate this publication to

Univ. -Prof. Dr. -Ing. Andreas Michalowski University of Stuttgart

Prof. Dr. Andreas Hotho

Junior-Prof. Dr.-Ing. Andreas Pott

Andreas Kaufmann

Andreas Pahler University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.