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Ion-Implanted Base SiGe PNP Self-Aligned SEEW Transistors

D. Nguyen-Ngoc, D. Harame, J. Burghartz, R. McIntosh, E. Crabbé, J. Warnock, C. Stanis, B. Meyerson, J. Cotte, and J. Comfort. Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Minneapolis Marriott City Center Hotel, September 9 - 10, 1991, page 75-78. Piscataway, New Jersey, IEEE, (1991)
DOI: 10.1109/BIPOL.1991.160960

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Gretchen Chojnacki-Herbers University of Stuttgart

English for Science and Technology (C1)I. Böhner, G. Chojnacki-Herbers, J. Michaels, and J. Nixon. Carl Hanser Verlag GmbH & Co. KG, München, 1 edition, (2024)

Other publications of authors with the same name

A Low-Capacitance Bipolar/BiCMOS Isolation Technology : I : Concept, Fabrication Process, and CharacterizationJ. Burghartz, R. McIntosh, and C. Stanis. IEEE Transactions on Electron Devices, 41 (8): 1379-1387 (August 1994)Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization TechniqueJ. Burghartz, J. Warnock, J. Cressler, C. Stanis, R. McIntosh, J. Sun, J. Comfort, J. Stork, K. Jenkins, E. Crabbé and 2 other author(s). Proceedings of the 22nd European Solid State Device Research Conference Leuven, 14-17 September 1992, page 531-534. Amsterdam, Elsevier, (1992)SPIRIT : A Bipolar/BiCMOS Isolation Technology For High-Performance VLSIJ. Burghartz, A. Cifuentes, R. McIntosh, C. Stanis, J. Cressler, J. Warnock, J. Sun, J. Comfort, and K. Jenkins. Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 143-144. Piscataway, New Jersey, IEEE, (1993)Ion-Implanted Base SiGe PNP Self-Aligned SEEW TransistorsD. Nguyen-Ngoc, D. Harame, J. Burghartz, R. McIntosh, E. Crabbé, J. Warnock, C. Stanis, B. Meyerson, J. Cotte, and J. Comfort. Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Minneapolis Marriott City Center Hotel, September 9 - 10, 1991, page 75-78. Piscataway, New Jersey, IEEE, (1991)