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Ion-Implanted Base SiGe PNP Self-Aligned SEEW Transistors

D. Nguyen-Ngoc, D. Harame, J. Burghartz, R. McIntosh, E. Crabbé, J. Warnock, C. Stanis, B. Meyerson, J. Cotte, and J. Comfort. Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Minneapolis Marriott City Center Hotel, September 9 - 10, 1991, page 75-78. Piscataway, New Jersey, IEEE, (1991)
DOI: 10.1109/BIPOL.1991.160960

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L. Ahlgrimm

Beatrice Caroli University of Stuttgart

Lambert Theisen University of Stuttgart

Univ. -Prof. Dr. -Ing. Hendrik Lens University of Stuttgart

Grid-forming converters in interconnected power systems: Requirements, testing aspects, and system impactS. Rogalla, P. Ernst, H. Lens, T. Schaupp, C. Schöll, R. Singer, and J. Ungerland. IET Renewable Power Generation, (2024)

Grid-forming converters in interconnected power systems: Requirements, testing aspects, and system impactS. Rogalla, P. Ernst, H. Lens, T. Schaupp, C. Schöll, R. Singer, and J. Ungerland. IET Renewable Power Generation, (2024)Considering Reactive Power in Generation Expansion Planning for Energy System DesignG. Recht, K. Cao, O. Alaya, B. Jahn, and H. Lens. EnInnov, (January 2024)

Stephan Lang University of Stuttgart

Simulation und Messung der Wärmeverluste von Warmwasserspeichern mit und ohne VakuumwärmedämmungS. Lang, H. Drück, and B. Hafner. 32. Symposium Solarthermie und Innovative Wärmesysteme, page 355-367. Pforzheim, Conexio-PSE GmbH, (2022)

Simulation und Messung der Wärmeverluste von Warmwasserspeichern mit und ohne VakuumwärmedämmungS. Lang, H. Drück, and B. Hafner. 32. Symposium Solarthermie und Innovative Wärmesysteme, page 355-367. Pforzheim, Conexio-PSE GmbH, (2022)Feldtest eines großvolumigen und vakuumwärmegedämmten WarmwasserspeichersJ. Ullmann, S. Lang, H. Drück, M. Genbaur, G. Röder, and M. Sirch. 32. Symposium Solarthermie und Innovative Wärmesysteme, page 423-434. Pforzheim, Conexio-PSE GmbH, (2022)Erweiterung und Optimierung der solaren Nahwärmeversorgung Hirtenwiesen II in Crailsheim sowie Begleitforschung zu solarer Nahwärme und saisonaler Wärmespeicherung : Akronym "CROW" : AbschlussberichtH. Drück, N. Bonk, W. Juschka, J. Ullmann, S. Lang, M. Gensbaur, D. Bestenlenlehner, J. Hübner, E. Reu, and S. Abel. Bundesministerium für Wirtschaft und Klimaschutz, Stuttgart, (2022)

Other publications of authors with the same name

Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization TechniqueJ. Burghartz, J. Warnock, J. Cressler, C. Stanis, R. McIntosh, J. Sun, J. Comfort, J. Stork, K. Jenkins, E. Crabbé and 2 other author(s). Proceedings of the 22nd European Solid State Device Research Conference Leuven, 14-17 September 1992, page 531-534. Amsterdam, Elsevier, (1992)SPIRIT : A Bipolar/BiCMOS Isolation Technology For High-Performance VLSIJ. Burghartz, A. Cifuentes, R. McIntosh, C. Stanis, J. Cressler, J. Warnock, J. Sun, J. Comfort, and K. Jenkins. Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 143-144. Piscataway, New Jersey, IEEE, (1993)Novel In-Situ Doped Polysilicon Emitter Process With Buried Diffusion Source (BDS)J. Burghartz, A. Megdanis, J. Cressler, J. Sun, C. Stanis, J. Comfort, K. Jenkins, and F. Cardone. IEEE Electron Device Letters, 12 (12): 679-681 (December 1991)Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistorsJ. Burghartz, J. Sun, C. Stanis, S. Mader, and J. Warnock. IEEE Transactions on Electron Devices, 39 (6): 1477-1489 (June 1992)Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technologyJ. Burghartz, J. Comfort, G. Patton, B. Meyerson, J. Sun, J. Stork, C. Stanis, G. Scilla, and B. Ginsberg. IEEE Electron Device Letters, 11 (7): 288-290 (July 1990)Profile Leverage in Self-Aligned Epitaxial Si Or SiGe Base Bipolar TransistorsJ. Comfort, G. Patton, J. Cressler, W. Lee, E. Crabbé, B. Meyerson, J. Sun, J. Stork, P. Lu, J. Burghartz and 6 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 21-24. Piscataway, New Jersey, IEEE, (1990)A Low-Capacitance Bipolar/BiCMOS Isolation Technology : I : Concept, Fabrication Process, and CharacterizationJ. Burghartz, R. McIntosh, and C. Stanis. IEEE Transactions on Electron Devices, 41 (8): 1379-1387 (August 1994)Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technologyJ. Burghartz, S. Mader, B. Ginsberg, B. Meyerson, J. Stork, C. Stanis, J. Sun, and M. Polcari. IEEE Transactions on Electron Devices, 38 (2): 378-385 (February 1991)Ion-Implanted Base SiGe PNP Self-Aligned SEEW TransistorsD. Nguyen-Ngoc, D. Harame, J. Burghartz, R. McIntosh, E. Crabbé, J. Warnock, C. Stanis, B. Meyerson, J. Cotte, and J. Comfort. Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Minneapolis Marriott City Center Hotel, September 9 - 10, 1991, page 75-78. Piscataway, New Jersey, IEEE, (1991)Device design issues for a high-performance technology with Si or SiGe epitaxial baseJ. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Microelectronic Engineering, 15 (1-4): 11-14 (October 1991)