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Ion-Implanted Base SiGe PNP Self-Aligned SEEW Transistors

, , , , , , , , , and . Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Minneapolis Marriott City Center Hotel, September 9 - 10, 1991, page 75-78. Piscataway, New Jersey, IEEE, (1991)
DOI: 10.1109/BIPOL.1991.160960

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Ion-Implanted Base SiGe PNP Self-Aligned SEEW Transistors, , , , , , , , , and . Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Minneapolis Marriott City Center Hotel, September 9 - 10, 1991, page 75-78. Piscataway, New Jersey, IEEE, (1991)Integrated, variable-reluctance magnetic minimotor., , , , , , , , , and 4 other author(s). IBM Journal of Research and Development, 42 (5): 681-694 (1998)An Ultra-low Thermal-budget SiGe-base Bipolar Technology, , , , , , , and . Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 59-60. Piscataway, New Jersey, IEEE, (1993)A high performance epitaxial SiGe-base ECL BiCMOS technology, , , , , , , , , and 7 other author(s). Technical digest : International Electron Devices Meeting 1992 : San Francisco, CA, December 13 - 16, 1992, page 19-22. Piscataway, New Jersey, IEEE, (1992)