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An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling.

, , , , , , , , , , , , , , and . 3DIC, page 1-4. IEEE, (2009)

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Panel: "will 3D-IC remain a technology of the future... even in the future?"., , , , , , , and . DATE, page 1526-1530. EDA Consortium San Jose, CA, USA / ACM DL, (2013)A successful implementation of dual damascene architecture to copper TSV for 3D high density applications., , , , , , and . 3DIC, page 1-4. IEEE, (2010)First integration of Cu TSV using die-to-wafer direct bonding and planarization., , , , , , , , , and 3 other author(s). 3DIC, page 1-5. IEEE, (2009)RF characterization of substrate coupling between TSV and MOS transistors in 3D integrated circuits., , , , , , , , and . 3DIC, page 1-8. IEEE, (2013)Which interconnects for which 3D applications? Status and perspectives., , , , , and . 3DIC, page 1-6. IEEE, (2013)Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric., , , , , , , , , and . Microelectronics Reliability, 53 (1): 17-29 (2013)An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling., , , , , , , , , and 5 other author(s). 3DIC, page 1-4. IEEE, (2009)Modelling of Through Silicon Via RF performance and impact on signal transmission in 3D integrated circuits., , , , , , , , , and 3 other author(s). 3DIC, page 1-7. IEEE, (2009)