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Variation-Aware Physics-Based Electromigration Modeling and Experimental Calibration for VLSI Interconnects., , , , , , , and . IRPS, page 1-6. IEEE, (2019)Doped GeSe materials for selector applications., , , , , , , , , and 1 other author(s). ESSDERC, page 168-171. IEEE, (2017)Pinhole Defect Characterization and Fault Modeling for STT-MRAM Testing., , , , , , , , and . ETS, page 1-6. IEEE, (2019)SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories., , , , , , , , , and 9 other author(s). VLSI Circuits, page 81-82. IEEE, (2018)A Smaller, Faster, and More Energy-Efficient Complementary STT-MRAM Cell Uses Three Transistors and a Ground Grid: More Is Actually Less., , , , , and . IEEE Trans. VLSI Syst., 25 (4): 1204-1214 (2017)Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown., , , , , , , , , and 1 other author(s). IRPS, page 5-1. IEEE, (2018)Cross-layer design and analysis of a low power, high density STT-MRAM for embedded systems., , , , , , , , , and . ISCAS, page 1-4. IEEE, (2017)SOT-MRAM 300mm integration for low power and ultrafast embedded memories., , , , , , , , , and 9 other author(s). CoRR, (2018)Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit., , , , , , and . ESSDERC, page 146-149. IEEE, (2018)Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament., , , , , , and . NVMTS, page 1-5. IEEE, (2017)