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On the volatility of oxide defects: Activation, deactivation, and transformation., , , , , , and . IRPS, page 5. IEEE, (2015)Characterization and modeling of charge trapping: From single defects to devices., , , , , , , , and . ICICDT, page 1-4. IEEE, (2014)Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence., , , , , , and . Microelectronics Reliability, (2018)Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM., , , , , , and . ESSDERC, page 146-149. IEEE, (2019)Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate., , , , and . Microelectronics Reliability, 49 (9-11): 998-1002 (2009)Characterization and modeling of reliability issues in nanoscale devices., , , and . ISCAS, page 2445-2448. IEEE, (2015)VSP - A gate stack analyzer., , , , , , , , , and . Microelectronics Reliability, 47 (4-5): 704-708 (2007)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)The effect of uniaxial stress on band structure and electron mobility of silicon., , , , and . Mathematics and Computers in Simulation, 79 (4): 1071-1077 (2008)