%0 Journal Article %1 jiang2024evaluating %A Jiang, Zhouhang %A Guo, Zixiang %A Luo, Xuyi %A Sayed Afaque, Munazza %A Faris, Zubair %A Mulaosmanovic, Halid %A Duenkel, Stefan %A Soss, Steven %A Beyer, Sven %A Gong, Xiao %A Kurinec, Santosh %A Narayanan, Vijaykrishnan %A Amrouch, Hussam %A Zhang, En Xia %A Fleetwood, Daniel M. %A Schrimpf, Ronald D. %A Ni, Kai %D 2024 %I IEEE %J IEEE electron device letters %K %N 7 %P 1165-1168 %R 10.1109/LED.2023.3332071 %T Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory %V 45

@article{jiang2024evaluating, added-at = {2025-02-12T09:17:35.000+0100}, affiliation = {Jiang, ZH (Corresponding Author), Rochester Inst Technol, Rochester, NY 14623 USA. Jiang, Zhouhang; Faris, Zubair; Kurinec, Santosh; Ni, Kai, Rochester Inst Technol, Rochester, NY 14623 USA. Guo, Zixiang; Luo, Xuyi; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D., Vanderbilt Univ, Nashville, TN 37235 USA. Sayed, Munazza, Univ Stuttgart, D-70174 Stuttgart, Germany. Mulaosmanovic, Halid; Duenkel, Stefan; Soss, Steven; Beyer, Sven, GlobalFoundries Fab1 LLC, D-01109 Dresden, Germany. Gong, Xiao, Natl Univ Singapore, Singapore 119077, Singapore. Narayanan, Vijaykrishnan, Penn State Univ, University Pk, PA 16802 USA. Amrouch, Hussam, Tech Univ Munich, D-80333 Munich, Germany.}, author = {Jiang, Zhouhang and Guo, Zixiang and Luo, Xuyi and Sayed Afaque, Munazza and Faris, Zubair and Mulaosmanovic, Halid and Duenkel, Stefan and Soss, Steven and Beyer, Sven and Gong, Xiao and Kurinec, Santosh and Narayanan, Vijaykrishnan and Amrouch, Hussam and Zhang, En Xia and Fleetwood, Daniel M. and Schrimpf, Ronald D. and Ni, Kai}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2e09958db22e0a134d29016e728804738/unibiblio}, doi = {10.1109/LED.2023.3332071}, interhash = {eb2aaa493bbcbcda11c7b419293e03bf}, intrahash = {e09958db22e0a134d29016e728804738}, issn = {{0193-8576} and {0741-3106}}, journal = {IEEE electron device letters}, keywords = {}, language = {eng}, number = 7, orcid-numbers = {Zhang, Enxia/0000-0002-8021-2411 GONG, XIAO/0000-0002-9243-1937}, pages = {1165-1168}, publisher = {IEEE}, research-areas = {Engineering}, timestamp = {2025-02-12T08:17:35.000+0100}, title = {Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory}, unique-id = {WOS:001259656500002}, volume = 45, year = 2024 }